GCD75-100MC GLE DR7.8*5.0 B3.0
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Product Details
| Brand Name | GLE | Place of Origin | China | |
| Model Number | GCD75-100MC |
Product Description
Factory
GCD75-100MC GLE DR7.8*5.0 B3.0
Core: Dr7.8x5.0 B3.0
SN: 107H
WIRE: P180-G1-0.XXmm/XX.5Ts(REF)
Terminal
Strength When the device is pushed in two directions of X and Z with the
force of 5N for 10±2seconds after soldering between copper plate
and the electrode
Reflow test
Change from an initial
value
L : within±20
The specimen shall be subjected to the reflow process under
the above condition 2 times.Test board shall be 0.8mm thick. Base material shall be glass epoxy re
Measurement The specimen shall be stored at standard atmospheric
conditions for 1 h in prior to the measurement.
Vibration
Change from an initial
value
L : within±20%
The specimen shall be subjected to a vibration of 1.5mm
amplitude, sweep frequency 10~55~10Hz after vibration for 1
hours
Free fall tesT
Change from an initial
value
L : within±20%
The specimen must be fixed on test board. Then it shall be fallen
freely from 1m height. 10 consecutive time
Contact Us
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- Address, Shenzhen, Guangdong, China
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CJ3400A N-Channel Enhancement Mode Field Effect Transistor Jscj
CPI-210 Photo-interrupter LED CITIZEN
IRF540 Vishay / Siliconix MOSFET RECOMMENDED ALT 844-IRF540PBF
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GP9101-F10K-L2H1-SW APC (Analog to PWM Convertor) Guestgood
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HT7550 SOT-89 Holtek
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IRFU220NPBF Infineon Technologies MOSFET MOSFT 200V 5A 600mOhm 15nC
KSZ8721BL Microchip Technology Ethernet ICs 10/100 BASE-TX/FX Physical Layer Transceiver
L7805ABV STMicroelectronics Linear Voltage Regulators 5.0V 1.0A Positive
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REF195GSZ-REEL7 Analog Devices Voltage References MCROPOWER 5V REF IC